ksd363 npn epitaxial silicon transistor b/w tv horizontal deflection output collector-base voltage : v cbo =300v collector current : i c =6a collector dissipation : p c =40w(t c =25 c ) absolute maximum ratings electrical characteristics (t c =25 c ) h fe classification characteristic symbol rating unit collector-base voltage collector-emitter voltage emitter-base voltage collector current collector dissipation (t c =25 c ) junction temperature storage temperature v cbo v ceo v ebo i c p c t j t stg 300 120 8 6 40 150 -55 ~ 150 v v v a w c c characteristic symbol test conditions min typ max unit collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cut-off current dc current gain collector-emitter saturation voltage base-emitter saturation voltage current gain-band width product bv cbo bv ceo bv ebo i cbo h fe v ce (sat) v be (sat) f t i c =1ma, i e = 0 i c = 20ma, i b = 0 i e = 1ma, i c = 0 v cb = 250v, i e = 0 v ce = 5v, i c = 1a i c = 1a, i b = 0.1a i c = 1a, i b = 0.1a v ce = 5v, i c = 0.5a 300 120 8 40 10 1 240 1 1.5 v v v ma v v mhz classification r o y h fe 40 - 80 70 - 140 120 - 240 1.base 2.collector 3.emitter to-220 ? 1999 fairchild semiconductor corporation rev. b
ksd363 npn epitaxial silicon transistor
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